Andrew Irvine | 1 Apr 10:12 2010
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Re: Etching Al on GaAs

I remove Al from GaAs with Shipley Microposit MF-319 developer, which is 
the developer for S1813 resist - I think there should be a pretty wide 
range of developers which are chemically similar though (it's TMAH + H2O 
+ surfactant).  It works much better than HCl, in my experience.

I haven't tried it with Al on top of PMMA, but would be fairly surprised 
if it caused a problem.

Andy

David Casale wrote:
> Mikas,
> 
> For etching Al I have in my lists 10% potassium ferrocyanide (cautions
> to avoid any acids due to the generation of poisonous hydrogen cyanide),
> 19:1:1:2 of phosphoric acid (85%): acetic acid: nitric acid (70%):
> water. The second one may still etch GaAs because of phosphoric acid, so
> I would try the K3Fe(CN)6. 
> 
> Best of luck,
> 
> David Casale
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leiwangsdu | 1 Apr 14:08 2010
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Help for materials used for implantation mask

    Hello, everyone!!!
    I'm looking for an appropriate mask materials for MeV ion implantation.
Because of high energy and dose of the implantation, photoresist is not
the right candidate of the mask materials.
    The implantation mask should have enough thickness to block the 
implanted ions. The sidewall of the fabricated pattern of mask should 
be steep to ensure an demanded damage profiles.
    Could anybody kindly help me and provide a strategy to satisfy the 
ion implantation. Thanks a lot!!!

leiwangsdu
2010-04-01
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Paul Nguyen | 1 Apr 23:58 2010
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Standalone wet station

Hello all:

My group is looking for a used standalone wet station just for resist
stripping.  Any info would be appreciated.

Regards,
Paul Nguyen
paulhnguyen06 <at> gmail.com
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Andrea Mazzolari | 2 Apr 19:40 2010
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metallic mask

Hi all,

i need to thermal evaporate a metallic mask on a polished silicon wafer.
The mask should withstand 40% KOH etch for 5 hours.
I tried 20/30 Cr/Au, but it seams that it is not working: after about 1
hour etch many pinholes are generated in the Cr/Au layer, KOH penetrates
such pinholes and etch silicon.

Any suggestion on how to improve the resistance of Cr/Au layer ?
Any alternative to Cr/Au ?

Thanks,
Andrea

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Xiaoyong Liu | 2 Apr 20:21 2010
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ProteK B3 coating layer removal

Hi,
    I am using a so-called Protek B3 layer (spin coated) from Brewer Sciences as a protecting layer for my wafer
frontside during KOH wet etching. It serves its purpose pretty well, but it is very hard to remove. I tried
the remover (Protek remover 100) they suggested as well as acetone overnight. 

There is still an apparent layer there after overnight soaking in above solutions. I also tried to use O2
plasma (as well as CF4/O2 combination), but with no apparent effect.  I am wondering if someone has any
experience with it, and would share their insight with me. By the way, my sample is on Si substrate coated
with a thin layer of SiN. The features are just metal.

Thanks

Xiaoyong        
 		 	   		  
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ashwini jambhalikar | 3 Apr 04:03 2010
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microgate mems magnetic sensor

Friends, can sombody tell me, from where one can buy MICROGATE mems
magnetic sensor?

--
Ashwini

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Paul Nguyen | 3 Apr 22:12 2010
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Re: ProteK B3 coating layer removal

Hi Xiaoyong,

I used Protek from Brewer Science about 2 years ago.  What I used to
completely strip my 10-15um Protek were O2 Plasma (with high O2 dosage at
quite a longer time) followed by SC1 clean.

You may want to try this process to see if it helps.

Regards,
Paul

Forwarded message ----------
From: Xiaoyong Liu <xiaoyong_liu <at> hotmail.com>
To: <mems-talk <at> memsnet.org>
Date: Fri, 2 Apr 2010 18:21:35 +0000
Subject: [mems-talk] ProteK B3 coating layer removal
Hi,
   I am using a so-called Protek B3 layer (spin coated) from Brewer Sciences
as a protecting layer for my wafer frontside during KOH wet etching. It
serves its purpose pretty well, but it is very hard to remove. I tried the
remover (Protek remover 100) they suggested as well as acetone overnight.
There is still an apparent layer there after overnight soaking in above
solutions. I also tried to use O2 plasma (as well as CF4/O2 combination),
but with no apparent effect.  I am wondering if someone has any experience
with it, and would share their insight with me. By the way, my sample is on
Si substrate coated with a thin layer of SiN. The features are just metal.

Thanks
Xiaoyong

(Continue reading)

nidhi maheshwari | 4 Apr 15:02 2010
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Gold etchant for PDMS substrates

Dear All,

I have to pattern gold onto PDMS for electrodes fabrication. My device
requirements are such that I can not perform a lift-off. I have tried
etching gold (KI+I2+water) at room temperature. After etching, the
PDMS substrates take a reddish hue. These substrates do not bond to
any other material nor a subsequent layer of PDMS onto it gets cured.
Can anyone please suggest some alternative etchant or some method by
which I can cure subsequent PDMS (have already tried curing it at high
temperature for longer durations). Is there some well defined
chemistry between PDMS and gold etchant which I am missing here?

Thanks
Nidhi
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Xiaoyong Liu | 4 Apr 19:41 2010
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Re: ProteK B3 coating layer removal

Hi, Paul,

    Thanks for your suggestion. Would you mind telling me the detail of your process, like power, pressure, as
well as time. I used 50mTorr, at 300W for 20min, they are still there.

Thanks a lot

Xiaoyong

--Forwarded Message Attachment--
From: paulhnguyen06 <at> gmail.com
To: mems-talk <at> memsnet.org
Date: Sat, 3 Apr 2010 15:12:06 -0500
Subject: Re: [mems-talk] ProteK B3 coating layer removal

Hi Xiaoyong,

I used Protek from Brewer Science about 2 years ago.  What I used to
completely strip my 10-15um Protek were O2 Plasma (with high O2 dosage at
quite a longer time) followed by SC1 clean.

You may want to try this process to see if it helps.

Regards,
Paul
_______________________________________________
Hosted by the MEMS and Nanotechnology Exchange, the country's leading
provider of MEMS and Nanotechnology design and fabrication services.
Visit us at http://www.mems-exchange.org

(Continue reading)

Sophie Zhang | 5 Apr 08:41 2010
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negative ebeam resist

Hello,

I am looking for a negative ebeam resist which can be used as a mask to etch
a thick silica (2um) layer in BOE. Does anyone know any ebeam resist which is
able to do this?

Or does anyone know if ma-N 2400 or UVN30 works or not?

Thanks a lot!

Sophie
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Gmane