1 Apr 2010 10:12
Re: Etching Al on GaAs
Andrew Irvine <aci20 <at> cam.ac.uk>
2010-04-01 08:12:10 GMT
2010-04-01 08:12:10 GMT
I remove Al from GaAs with Shipley Microposit MF-319 developer, which is the developer for S1813 resist - I think there should be a pretty wide range of developers which are chemically similar though (it's TMAH + H2O + surfactant). It works much better than HCl, in my experience. I haven't tried it with Al on top of PMMA, but would be fairly surprised if it caused a problem. Andy David Casale wrote: > Mikas, > > For etching Al I have in my lists 10% potassium ferrocyanide (cautions > to avoid any acids due to the generation of poisonous hydrogen cyanide), > 19:1:1:2 of phosphoric acid (85%): acetic acid: nitric acid (70%): > water. The second one may still etch GaAs because of phosphoric acid, so > I would try the K3Fe(CN)6. > > Best of luck, > > David Casale _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe:(Continue reading)
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