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X.P. Zhu | 1 Apr 2005 07:30
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Natural oxidation layer on Ti film?

Dear All,
   A layer of Ti was deposited on substrate by e-beam.
But I can not make pattern on it by HCl. Is there an
oxidation layer on Ti film which protects it? If so,
how long does it take to form an oxidation layer after
the film exposed to the air? And how to remove this
layer by wet or dry etching? Thanks a lot!

ZHU X P
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Steven McMaster | 1 Apr 2005 09:25

RE: How to do the lift off process after aluminumdepo sition? It is negative resist.

Using a bi layer resist process gives excellent results. For example
Microchems LOR series of resists, then spinning imaging resist on to of that
gives an undercut which aids the solvent in removing both resists, and hence
the metal film. This LOR resist should be 1.3 times the film thickness you
want to lift off. 

Regards,

Steven.
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Maryna Lishchynska | 1 Apr 2005 12:35
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Mechanical properties for orthotropic SiN

Dear All,

Does anybody know where material properties (Young's modulus at least) of orthotropic SiN can be found?

Thanks,

Maryna.
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Erik Jung | 1 Apr 2005 15:19
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microstructured Pt thermal sensor

Dear colleagues,
do you have experience in microstructuring platinum for thermal sensors?
Is there a commercial supplier or an institute doing such sensors?
Range of reliable thermal operation should be -100?C...+200?C and response
time <10ms.
For the application I am doing this inquiry, currently Pt thermal sensor
wires are used.

Regards!

Erik Jung
Fraunhofer IZM
Berlin/Germany
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dyqiao | 1 Apr 2005 16:31
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Problem in photolithography

my spin speed is 4000rpm with a ramp of 30000r/s, and the prebake temperature is 100 degree c with a time of 1
minute, but there is always some photoresist
remained no matter how long the develop time, why? Is the pre bake temperature too high and the the
photoresist been destroyed?

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Brent Garber | 1 Apr 2005 18:35
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Re: Natural oxidation layer on Ti film?

Zhu,

HCl is not your best choice to etch Ti.  Try H2O2.  It will etch very fast
and even faster when heated.

Brent

"X.P. Zhu" wrote:
> A layer of Ti was deposited on substrate by e-beam.
> But I can not make pattern on it by HCl. Is there an
> oxidation layer on Ti film which protects it? If so,
> how long does it take to form an oxidation layer after
> the film exposed to the air? And how to remove this
> layer by wet or dry etching? Thanks a lot!
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Kamat Mahesh Keshav | 1 Apr 2005 19:10
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Piranha question

Hi,

Could anyone tell me the reactions associated with Piranha. When H2O2 is 
added to H2SO4, there is an exothermic reaction. Why does this happen and 
what is the reaction associated with it. What product does this reaction 
form which is so effective at stripping.

Thanks
MK
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Kamat Mahesh Keshav | 1 Apr 2005 19:14
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Re: Problem in photolithography

What photoresist is this?

In fact this happens with some photoresists...i have come across this 
problem recently. Though a microscope image shows that the resist has been 
stripped, my glass wafer is still hydrophobic.

Would be great if someone could tell why this happens

Thanks
MK

> my spin speed is 4000rpm with a ramp of 30000r/s, and the prebake 
> temperature is 100 degree c with a time of 1 minute, but there is always 
> some photoresist
> remained no matter how long the develop time, why? Is the pre bake 
> temperature too high and the the photoresist been destroyed?
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Haroon Lais | 1 Apr 2005 19:54
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RE:Problem in photolithography

First, What kind of resist do you use? Pre-bake 1
minute in 100 degree C, are you sure that you have
drive all the solvent out from the resist? and what
about your light exposure? you need to fine the right
light intensity so that the PR is not over-expose or
under-expose. In your case, it probably under-expose.
Developing PR for a long time is not desire, unless 
you have the control parameter. 

>my spin speed is 4000rpm with a ramp of 30000r/s, and the prebake 
>temperature is 100 degree c with a time of 1 minute, but there is always 
>some photoresist remained no matter how long the develop time, why? Is
>the pre bake temperature too high and the the photoresist been
>destroyed?
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Brubaker Chad | 1 Apr 2005 20:58

RE: Problem in photolithography

I would actually be more likely to look at my exposure to begin with.

There is a wide variety of photolithographic materials out there, ranging from ultra-thin (<100nm) to
ultra-thick (>100 μm), and the process parameters will depend on which material you are using.

Which photoresist are you processing with, to what thickness, and what is your exposure process (dose,
lamp intensity).

Best Regards,
Chad Brubaker
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Gmane