唐偉德 | 2 Mar 16:03 2003
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Helium gas sensor ...?

Dear all,

Does anyone know the working principle of helium gas sensor ?
Or inform me the related paper about this sensor.
Thank you a lot.

Weider Tang
National Tsing Hua Univ. Taiwan
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Pavel Neuzil | 1 Mar 01:39 2003
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Re: crystalline direction alignment

Dear Dr Zeng,
in case you really want to have precise alignment,
there is no other way around than to make an extra
mask and etch the silicon by KOH (TMAH) to fin out the
locatino of the <111> planes. The mask is quite
trivial but it is an extra step. 
The other option such as getting precisely made wafers
is fine except the final alignment precision is also
affected by yout litho tool. 
Pavel
SiMEMS

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Raj Kumar | 1 Mar 06:14 2003
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Silicon Powder


Hello All!
	I am looking for Silicon Powder. Would anybody plz. inform me list
of vendors, who supply silicon powder. I will appriciate if you can
tell me the specs of silicon powder for adding in TMAH based silicon
etching. 

Sincerely yours 

   RAJKUMAR
SCL, India
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zhliime | 2 Mar 02:20 2003
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Re: Anodic bonding SOI wafer and glass

See my paper "An SOI-MEMS technology using substrate layer and bonded glass
as wafer-level package"

Sensors and Actuators A: Physical, Volume 96, Issue 1, 31 January 2002,
Pages 34-42

----- Original Message -----
From: A.K.Ismail <A.K.Ismail <at> newcastle.ac.uk>
To: <mems-talk <at> memsnet.org>
Sent: Thursday, February 13, 2003 1:38 AM
Subject: [mems-talk] Anodic bonding SOI wafer and glass

> Hi,
>
> Does anybody has experience of how to bond SOI wafer to glass wafer using
> anodic bonding?
> Our SOI wafer is about 175-450 micron Si, 1 micron Oxide and 1 micron Si
p+.
> The interface bonding layer would be the 1 micron Si p+ layer on SOI wafer
> with another glass substrate. Your response would be appreciated.
>
> Thank you.
>
> A.K.Ismail
>
>
>
> _______________________________________________
> MEMS-talk <at> memsnet.org mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
(Continue reading)

Pavel Neuzil | 1 Mar 01:29 2003
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re: Wet Si etchant not attack Al and/or SiO2

Hi all,
as far as for the wet etching, you can us TMAH doped
with silicon. IT works quite OK assuming that the
aluminum is thick enough and not in any connection
with the substrate. Otherwise you get electrochemical
corrosion of the ground and VDD bond pad. The solution
also not that stable and it is sometimes matter of
luck, if it will work or not.
In case you can use dry etching with no preference in
directionality, the XeF2 is the best bet. If you wish
to test your sample, you can send us your wafer and we
will etch them for you. As simple as that. The
turnaround is approximately one week plus shipping
delay. A few wafers are assumed to be samples and we
will do it free of charge. Either email me at
neuzils <at> yahoo.com or have a look at the system at the
web site: http://www.pentavacuum.com/mems.htm
Pavel

______________________________________________________
Sunil,
Thanks a lot.
But I am wondering some Si Etchant(eg. KOH, TMAH)
which will not attack SiO2 and Al. Sorry about the
confusing. 
Johnny

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Pavel Neuzil | 1 Mar 01:35 2003
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re: Separating silicon from nickel

Hi all,
as far as for the wet etching, most likely TMAH might
do the job, otherwise vapor etching by Xenon Fluoride.
If you wish to test your sample, you can send us your
wafer and we will etch them for you. As simple as
that. The turnaround is approximately one week plus
shipping delay. A few wafers are assumed to be samples
and we will do it free of charge. Either email me at
neuzils <at> yahoo.com or have a look at the system at the
web site: http://www.pentavacuum.com/mems.htm
Pavel

By the way, there is an excellent reference book
called Handbook of metal Etchants by CRC press and
you might find a lot of information there. In my
opinion, this is the most 
useful book I have ever used. 

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(Continue reading)

ramji dhakal | 2 Mar 18:57 2003
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how to fabricate the cantilevers on a wafer?

Could you please let me know the fabrication procedure
for the cantilever combs in the linear comb device?
how can we fabricate them on a Si wafer with a
clearance of just a micron with the wafer surface..
Please do respond.

Thank you very much.

Ramzee 

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| 3 Mar 01:30 2003

Re: Silicon Powder

I was using silicon powder before. However, most of the
vendors give bad quality of powders which is full of
impurities. So, I was using silicon wafer instead.

To determine how much silicon should be added in the TMAH
solution, could you tell me what is your purpose?

> 
> Hello All!
>     I am looking for Silicon Powder. Would anybody plz.
> inform me list of vendors, who supply silicon powder. I
> will appriciate if you can tell me the specs of silicon
> powder for adding in TMAH based silicon etching. 
>  
> Sincerely yours 
> 
>    RAJKUMAR
> SCL, India
> __________________________________________________________
> ___________________ 
> 
> 
> 
> 
> _______________________________________________
> MEMS-talk <at> memsnet.org mailing list: to unsubscribe or
> change your list options, visit
> http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing
> services. Visit us at http://www.memsnet.org/
(Continue reading)

S.O. Ryu | 3 Mar 08:57 2003
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amorphous Si etch rate in TMAH?

Hi, guys
I wonder how much etch rate for amorphous Si in TMAH.
I found bunch of information regarding single crystal Si in TMAH but none for amorphous Si (a-Si;H).
Also, I am not very sure about PECVD Silicon Nitride or Silicon Oxide as mask materials.
are they good for TMAH etch?

Jack

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GreenWay_Lee | 3 Mar 11:12 2003

Is the interface of polysilicon and Cr Ohmic contact ?

Dear all,

I have a question about polysilicon / Cr interface.
Is the interface Ohmic contact or Schottky barrier?
How can I measure it?
Does the dopant of polysilicon matter?
If I want Ohmic contact, how can I do to improve it?

Thanks very much!

Best regards,

GreenWay

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Gmane