18 Jan 2011 06:10
stress state of photoresists
<my2232 <at> columbia.edu>
2011-01-18 05:10:14 GMT
2011-01-18 05:10:14 GMT
Hello mems-talk community, I have a question about the stress state of resists after they are developed, and ready for masking purposes. To give an example related to my question: I am working with SOI wafers, and the BOX oxide is in compressive state of stress. Hence, once you remove some parts of the silicon layers from certain places of your wafer (espacially if the silicon is removed from same location of both sides of the BOX layer) you will see that the BOX layer oxide will tend to have wrinkles, which indicates that the BOX oxide is in compressive state, and once it is free to move it will buckle up and down to change its stress state. Now, my questions is: What would be the case if we were using resist as BOX instead of thermal oxide as BOX? Would it be in compressive stress, and buckle up and down, or would it be in tensile state of stress and keep staying in completely flat (no wrinkles at all) state? The result may depend on the resist we are using, but I would be glad if someone can tell me if there is a resist with tensile state of stress? I am looking forward to your replies, and Thanks in advance, Mehmet Yilmaz(Continue reading)
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